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DMP3007SFG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP3007SFG
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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DMP3007SFG pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = -10V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Notes 8) L = 1mH
Avalanche Energy (Notes 8) L = 1mH
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
Steady State
TA = +25°C
Steady State
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
-30
VGS(TH)
RDS(ON)
VSD
-1.0
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Typ
4.3
6.6
-0.7
2826
606
305
23
31.2
64.2
10.6
11.6
4.8
4.3
306
125
19
9.8
Max
-1
±10
-3.0
6
13
-1.2
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMP3007SFG
Document number: DS39018 Rev. 2 - 2
2 of 7
www.diodes.com
DMP3007SFG
Value
-30
±25
-70
-55
-3.0
-120
-16
130
Unit
V
V
A
A
A
A
mJ
Value
1.2
105
2.8
45
3.0
-55 to +150
Unit
W
°C/W
W
°C/W
°C/W
°C
Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -24V, VGS = 0V
μA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250μA
mVGS = -10V, ID = -11.5A
VGS = -4.5V, ID = -8.5A
V VGS = 0V, IS = -1A
pF
pF VDS = -15V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC
nC VDS = -15V, ID = -11.5A
nC
ns
ns VDD = -15V, VGS = -10V,
ns Rg = 6, ID = -11.5A
ns
ns
nC IS = -11.5A, dI/dt = 100A/μs
September 2016
© Diodes Incorporated

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