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DMP2065UFDB डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2065UFDB
समारोह DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMP2065UFDB pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
Pulsed Drain Current (10s pulse, duty cycle = 1%)
TA = +25°C
TA = +85°C
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
DMP2065UFDB
Value
-20
±12
-4.5
-3.6
-25
-1.4
-13
9
Units
V
V
A
A
A
A
mJ
Thermal Characteristics
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
Steady state
t<10s
TA = +25°C
Steady state
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.74
171
131
1.54
82
60
13
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
TJ = +25°C
BVDSS
IDSS
IGSS
VGS(TH)
Min
-20
-0.4
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF

Typ
40
55
75
95
-0.75
752
87
78
15.2
9.1
1.2
1.9
5.4
8.3
47
20
Max
-1.0
±100
-1.0
100
150
200
-1.1

Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -20V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -2.0A
mVGS = -2.5V, ID = -2.0A
VGS = -1.8V, ID = -1.6A
VGS = -1.5V, ID = -1.0A
V VGS = 0V, IS = -1A
pF
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
pF
VGS = 0V, VDS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -4V,
nC ID = -3.5A
ns
ns VDS = -4V, VGS = -4.5V,
ns RG = 6, ID = -1A
ns
DMP2065UFDB
Document number: DS36745 Rev. 1 - 2
2 of 7
www.diodes.com
April 2016
© Diodes Incorporated

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