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DMP2170U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2170U
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMP2170U pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -4.5V
Steady TA = +25°C
State TA = +70°C
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Symbol
VDSS
VGSS
ID
IS
IDM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
PD
RJA
PD
RJA
TJ, TSTG
DMP2170U
Value
-20
±12
-3.1
-2.5
-1.25
-13
Units
V
V
A
A
A
Value
0.78
163
1.28
99
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min Typ Max
BVDSS
IDSS
IGSS
-20
-
-
--
- -1.0
- ±100
VGS(TH) -0.4 -1.01 -1.25
RDS(ON)
-
62 90
92 180
101 250
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD - -0.8 -1.1
Ciss - 303 -
Coss
- 46
-
Crss - 37 -
Rg - 16 -
Qg - 3.6 -
Qg - 7.8 -
Qgs - 0.6 -
Qgd - 1.1 -
tD(ON) - 5.4 -
tR - 18.3 -
tD(OFF) - 16.2 -
tF - 13.6 -
tRR - 5.5 -
QRR
- 1.23 -
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -20V, VGS = 0V
nA VGS = ±12V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -3.5A
mVGS = -2.7V, ID = -3.0A
VGS = -2.5V, ID = -2.6A
V VGS = 0V, IS = -1A
pF
pF
VDS = -10V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = -10V, ID = -1.5A
nC
ns
ns VDD = -10V, VGS = -4.5V,
ns ID = -3.5A, RG = 6Ω
ns
ns IS = -2.0A, dI/dt = -100A/μs
nC IS = -2.0A, dI/dt = -100A/μs
DMP2170U
Document number: DS38558 Rev. 1 - 2
2 of 7
www.diodes.com
June 2016
© Diodes Incorporated

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