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DMP2042UCB4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2042UCB4
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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<?=DMP2042UCB4?> डेटा पत्रक पीडीएफ

DMP2042UCB4 pdf
DMP2042UCB4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -2.5V
Pulsed Drain Current (Note 6)
Symbol
VDSS
VGSS
ID
ID
IDM
Value
-20
-6
-4.6
-3.7
-16
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.75
165
1.4
87
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Symbol
BVDSS
BVGSS
IDSS
IGSS
Min
-20
-6.0
Typ
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Series Clamp Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Charge at Vth
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Charge
Reverse Recovery Time
VGS(TH)
RDS(ON)
|YFS|
VSD
-0.4
-0.8
37
49
6.6
-0.7
CISS
COSS
CRSS
RG
RC
QG
QGS
QGD
QG(TH)
tD(ON)
tR
tD(OFF)
tF
QRR
tRR
218
148
11
20
5,000
2.5
0.4
0.4
0.2
0.6
0.8
1.4
0.8
2.2
10
Notes:
5. Device mounted on FR-4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
6. Repetitive rating, pulse width limited by junction temperature.
7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
Max
-1
-100
-1.2
45
65
-
-1.0
Unit Test Condition
V VGS = 0V, ID = -250μA
V VDS = 0V, IG = -250μA
µA VDS = -16V, VGS = 0V
nA VGS = -6V, VDS = 0V
V VDS = VGS, ID = -250μA
mVGS = -4.5V, ID =-1A
VGS = -2.5V, ID = -1A
S VDS = -10V, ID = -1A
V VGS = 0V, IS = -1A
pF
VDS = -10V, VGS = 0V,
f = 1.0MHz
f = 1MHz, VGS = 0V, VDS = 0V
nC VGS = -4.5V, VDS = -10V,
ID =-1A
µs
VDS = -10V, VGS = -2.5V,
RG = 10, ID = -1A
nC VDD = -10V, IF = -1.0A,
ns di/dt =100A/μs
DMP2042UCB4
Document number: DS38665 Rev. 2 - 2
2 of 7
www.diodes.com
July 2016
© Diodes Incorporated

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