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DMP2040UFDF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2040UFDF
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMP2040UFDF pdf
DMP2040UFDF
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -4.5V
Continuous Drain Current (Note 7) VGS = -4.5V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Continuous Source-Drain Diode Current (Note 6)
Avalanche Current (Note 8) L = 0.1mH
Avalanche Energy (Note 8) L = 0.1mH
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
Value
-20
±12
-6.1
-4.9
-13
-10
-17
14
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
Steady State
t<10s
TA = +25°C
Steady State
t<10s
Steady State
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.8
149
95
1.8
70
45
16
-55 to +150
Units
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
-20

-0.6


Typ Max Unit
Test Condition
  V VGS = 0V, ID = -250µA
 -1 µA VDS = -16V, VGS = 0V
 100 nA VGS = ±12V, VDS = 0V
-1.5 V VDS = VGS, ID = -250µA
22 32 mΩ VGS = -4.5V, ID = -8.9A
31 53
VGS = -2.5V, ID = -6.9A
-0.7 -1.2
V VGS = 0V, IS = -2.9A
pF VDS = -10V, VGS = 0V,
f = 1.0MHz
 Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nCVDS = -6V, ID = -8.9A
ns
VDD = -6V, RL = 6Ω
VGS = -4.5V, RG = 6Ω, ID = -1A

ns IF = -8.9A, di/dt = -100A/μs
nC IF = -8.9A, di/dt = -100A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMP2040UFDF
Document number: DS38984 Rev. 1 - 2
2 of 7
www.diodes.com
August 2016
© Diodes Incorporated

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