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DMP2035UVTQ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2035UVTQ
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMP2035UVTQ pdf
DMP2035UVTQ
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7) VGS = -4.5V
Steady
State
t<10s
Continuous Drain Current (Note 7) VGS = -2.5V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IS
IDM
Value
-20
±12
-6.0
-4.8
-7.2
-5.7
-5.2
-4.1
-6.2
-4.9
-2.0
-24
Units
V
V
A
A
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Steady State
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.2
106
74
2.0
65
46
11.8
-55 to 150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 8)
Symbol
Min
Typ
Max Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
BVDSS
-20
V
IDSS   -1 µA
IGSS   ±10 µA
Gate Threshold Voltage
VGS(th) -0.4 -0.7
-1.5
V
Gate Threshold Voltage Temperature Coefficient /VGS(th) TJ
2.5
mV/°C
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
RDS(ON)
|Yfs|
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
23
30
41
18
-0.7
1610
157
145
9.4
15.4
2.5
3.3
17
12
94
42
14
4
35
45
62
-1.0
2400
210
200
14.1
23.1
33
19
150
64
25
8
m
S
V
pF
Ω
nC
ns
ns
nC
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP2035UVTQ
Document number: DS37400 Rev. 1 - 2
2 of 6
www.diodes.com
Test Condition
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = -250µA
ID = -250µA , Referenced to
+25°C
VGS = -4.5V, ID = -4.0A
VGS = -2.5V, ID = -4.0A
VGS = -1.8V, ID = -2.0A
VDS = -5V, ID = -5.5A
VGS = 0V, IS = -1A
VDS = -10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = -10V, VGS = -4.5V
ID = -4A
VGS = -4.5V, VDS = -10V, RG = 6Ω,
ID = -1A, RL = 10Ω
IF =-4.5A, di/dt=100A/µS
July 2014
© Diodes Incorporated

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