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DMP2035UFCL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2035UFCL
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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<?=DMP2035UFCL?> डेटा पत्रक पीडीएफ

DMP2035UFCL pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6)
Steady TA = +25°C
State TA = +70°C
Pulsed Drain Current (380μs Pulse, 1% Duty Cycle)(Note 7)
Maximum Continuous Body Diode Forward Current (Note 6)
Symbol
VDSS
VGSS
ID
IDM
IS
DMP2035UFCL
Value
-20
±8
-6.6
-5.3
-40
-1.7
Units
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.74
169
1.6
79
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Zero Gate Voltage Drain Current TJ = +150°C (Note 8)
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min Typ Max
BVDSS
IDSS
IDSS
IGSS
-20
-
-
-
--
- -1.0
- -100
- ±10
VGS(TH)
-0.4
-
-1.0
RDS(ON)
-
19 24
24 31
31 45
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -8V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
-0.5 -0.7 -1.2
- 1,610 2,200
- 157 240
- 145 220
- 9.45 14.5
- 29 44
- 15.4 21
- 2.5 3.8
- 3.3 5
- 16.8 34
- 12.4 25
- 94.1 188
- 42.4 85
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -16V, VGS = 0V
μA VDS = -16V, VGS = 0V
μA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -8.0A
mVGS = -2.5V, ID = -7.0A
VGS = -1.8V, ID = -6.0A
V VGS = 0V, IS = -1A
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC VDS = -10V,
nC ID = -4A
nC
ns
ns VDS = -20V, VGS = -10V,
ns RG = 6.0Ω, ID = -6A
ns
DMP2035UFCL
Document number: DS37917 Rev. 1 - 2
2 of 7
www.diodes.com
September 2015
© Diodes Incorporated

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