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DMP2010UFG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2010UFG
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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<?=DMP2010UFG?> डेटा पत्रक पीडीएफ

DMP2010UFG pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current, VGS = -4.5V (Note 6)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH (Note 7)
Avalanche Energy, L=0.1mH (Note 7)
TA = +25°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMP2010UFG
Value
-20
±10
-12.7
-42
-3
-80
-35
64
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
0.9
136
2.3
54
4
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
-20
-0.4
Typ
-0.7
3350
527
460
10.7
50
103
6.0
14.4
9.7
30
235
110
64
60
Max
-1
±100
-1.2
9.5
12.5
-1.2
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = -1mA
µA VDS = -16V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250µA
mVGS = -4.5V, ID = -3.6A
VGS = -2.5V, ID = -3.6A
V VGS = 0V, IS = -10A
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nCVDS = -10V, ID = -3.6A
ns
VDD = -10V, VGS = -4.5V,
RGEN = 4.7Ω, ID = -3.6A
ns
nC IF = -3.6A, di/dt = 100A/µs
POWERDI is a registered trademark of Diodes Incorporated.
DMP2010UFG
Document number: DS37848 Rev. 2 - 2
2 of 7
www.diodes.com
September 2015
© Diodes Incorporated

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