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DMP10H4D2S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP10H4D2S
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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<?=DMP10H4D2S?> डेटा पत्रक पीडीएफ

DMP10H4D2S pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Pulsed Drain Current (10μs Pulse, Duty Cycle 1%)
Maximum Body Diode Continuous Current (Note 6)
Steady
State
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
IS
DMP10H4D2S
Value
-100
±20
-0.27
-0.21
-1.0
-0.42
Units
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady
State
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Symbol
PD
RθJA
RθJA
RθJC
TJ, TSTG
Value
0.38
0.44
333
282
115
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min Typ Max
BVDSS -100
IDSS

1
IGSS   ±10
VGS(TH) -1.0 -2.3 -3.0
2.8 4.2
RDS(ON)

3.2
5.0
VSD -0.82 -1.3
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
Qrr
87
5.6
2.9
 15.3
1.8
0.3
0.5
3.3
2.6
 8.4
 4.9
 17.8
 24.8





Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Unit
Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -100V, VGS = 0V
μA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -10V, ID = -0.5A
VGS = -4.0V, ID = -0.1A
V VGS = 0V, IS = -0.2A
pF
VDS = -25V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDS = -80V, VGS = -10V,
ID = -0.5A
ns
VDS = -50V, ID = -0.5A,
VGS = -10V, RG = 10
ns VR = -100V, IF = -1.0A, di/dt =
nC 100A/µs
DMP10H4D2S
Document number: DS37891 Rev. 2 - 2
2 of 6
www.diodes.com
September 2015
© Diodes Incorporated

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