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PZ509BA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या PZ509BA
समारोह P-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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<?=PZ509BA?> डेटा पत्रक पीडीएफ

PZ509BA pdf
PZ509BA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-30
-1.3 -1.8 -2.3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 55 °C
-1
mA
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -1A
VGS =-10V, ID = -1.2A
VDS = -5V, ID = -1.2A
165 180
117 135
5
S
DYNAMIC
Input Capacitance
Ciss
213
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz 36 pF
Reverse Transfer Capacitance
Crss
26
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=-10V)
Qg(VGS=-4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -15V,ID = -1.2A
VDD = -15V, ID @ -1.2A,
VGS = -10V, RG = 6Ω
4.7
2.6
nC
0.6
1.2
14
36
nS
42
34
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = -1.2A, VGS = 0V
-0.27
-1.1
A
V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -1.2A, dlF/dt = 100A /mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
10 nS
3.6 nC
2Independent of operating temperature.
REV 1.0 2 2015/6/8

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