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P9006ETF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P9006ETF
समारोह P-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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P9006ETF pdf
P9006ETF
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = -48V, VGS = 0V
VDS = -40V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
VGS = -4.5V, ID = -6A
VGS = -10V, ID = -18A
VDS = -5V, ID = -18A
-60
-1.0 -1.8 -3.0
±250
1
10
-60
79 135
63 90
20
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -25V, f = 1MHz
1130
129
Reverse Transfer Capacitance
Crss
81
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
4.85
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -18A
Qgd
22.0
4.6
5.5
Turn-On Delay Time2
td(on)
18
Rise Time2
tr VDS = -30V,
120
Turn-Off Delay Time2
td(off)
ID @ -18A, VGS = -10V, RGS = 6Ω
20
Fall Time2
tf
58
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = -18A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -18A,
dlF/dt = 100A / μS
71
254
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-15
-1.3
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16

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डाउनलोड[ P9006ETF Datasheet.PDF ]


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