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P1160ZT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P1160ZT
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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P1160ZT pdf
P1160ZT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
600
2 3.4
4
V
±100 nA
Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
RDS(ON)
gfs
VDS = 600V, VGS = 0V , TC = 25 °C
VDS = 480V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 5.5A
VDS = 10V, ID = 5.5A
1
mA
100
343 390
8S
DYNAMIC
Input Capacitance
Ciss
879
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance4
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Coss
Crss
Co(er)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0 to 480V
VDD = 480V, ID =5.5A, VGS = 10V
VDD = 300V,ID = 5.5A,RG = 10Ω
654
pF
11
50
31
4.4 nC
16
28
67
nS
75
37
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 5.5A, VGS = 0V
11 A
1.5 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5.5A, dls/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
306 nS
3.8 nC
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
4.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
REV 1.0
2 2017/1/13

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डाउनलोड[ P1160ZT Datasheet.PDF ]


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