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P9515BD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P9515BD
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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P9515BD pdf
P9515BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
150
1.3 1.8 2.3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 10A
VDS = 5V, ID = 10A
80 110
76 90
35 S
DYNAMIC
Input Capacitance
Ciss
1119
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz 106 pF
Reverse Transfer Capacitance
Gate Resistance
Crss
Rg
VGS = 0V, VDS = 0V, f = 1MHz
50
0.9 Ω
Total Gate Charge2
Gate-Source Charge2
Qg(VGS = 10V)
Qg(VGS = 4.5V)
Qgs
VDS = 75V, VGS = 10V,
ID = 10A
24
13
nC
3.3
Gate-Drain Charge2
Qgd
7
Turn-On Delay Time2
td(on)
21
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 75V,
ID @ 10A, VGS = 10V, RGEN = 6Ω
34
30
nS
Fall Time2
tf
22
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 10A, VGS = 0V
15 A
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
55 nS
96 nC
2Independent of operating temperature.
REV 1.1 2 2016/6/6

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डाउनलोड[ P9515BD Datasheet.PDF ]


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