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P9006EL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P9006EL
समारोह P-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
1 Page
		
<?=P9006EL?> डेटा पत्रक पीडीएफ

P9006EL pdf
P9006EL
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = -48V, VGS = 0V
VDS = -40V, VGS = 0V , TJ = 125 °C
VDS = -10V, VGS = 10A
VGS = -4.5V, ID = -2A
VGS = -10V, ID = -4A
VDS = -10V, ID = -4A
-60
-1.0 -1.7 -3.0
±100
-1
-10
-30
82 135
72 90
15
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -25V, f = 1MHz
1130
130
Reverse Transfer Capacitance
Crss
79
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
4.75
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS,
ID = -4A, VGS = -10V
Qgd
18
6
4
Turn-On Delay Time2
td(on)
10
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -30V, ID @ -4A,
VGS = -10V, RGS = 2.5Ω
15
27
Fall Time2
tf
17
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -4A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -4A, dl/dt = 100A / μS
72
127
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-2.4
-1.3
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/12

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डाउनलोड[ P9006EL Datasheet.PDF ]


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