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P9006EVG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P9006EVG
समारोह P-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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P9006EVG pdf
P9006EVG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = -250μA
-60
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250μA
-1.0 -1.5 -2.5
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±250
Zero Gate Voltage Drain Current
IDSS
VDS = -48V, VGS = 0V
VDS = -36V, VGS = 0V , TJ = 125 °C
1
10
On-State Drain Current1
ID(ON)
VDS = -5V, VGS = -10V
-20
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -3.5A
VGS = -10V, ID = -4.5A
VDS = -10V, ID = -4.5A
90 150
70 90
9
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -30V, f = 1MHz
760
90
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS,
ID = -4.5A, VGS = -10V
VDS = -20V,
ID -1A, VGS = -10V, RGS= 6Ω
40
15.0
2.5
3.0
7 14
10 20
19 34
12 22
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Pulsed Current3
ISM
Forward Voltage1
VSD IF = Is, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -3.5A, dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 μsec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
-1.3
-2.6
-1
15.5
7.9
UNIT
V
nA
μA
A
mΩ
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/7/17

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