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P1103BVG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P1103BVG
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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P1103BVG pdf
P1103BVG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 11A
VDS = 15V, ID = 10A
30
1.0 1.5 2.5
±100
1
10
13.0 16.5
9.0 11.0
38
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0V, VDS = 15V, f = 1MHz
Reverse Transfer Capacitance
Crss
1800
720
125
Gate Resistance
Rg VGS = 15mV, VDS = 0V, f = 1MHz
1.5
Total Gate Charge2(10V)
Qg(VGS = 10V)
Qg(VGS = 4.5V)
17
12
Gate-Source Charge2
Qgs(VGS = 10V)
Qgs(VGS = 4.5V)
VDS = 0.5V(BR)DSS, ID = 11A
3.7
3.5
Gate-Drain Charge2
Qgd(VGS = 10V)
Qgd(VGS = 4.5V)
6.5
6.3
Gate-Drain Charge2
Qgd
5.1
Turn-On Delay Time2
td(on)
8.6
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V, RL = 25Ω
VGS = 10V, ID @ 1A, RGEN = 6Ω
21.0
43.0
Fall Time2
tf
10.0
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Pulsed Current3
ISM
Forward Voltage1
VSD IF = 1A, VGS = 0V
Reverse Recovery Time
trr IF = 2.3A, dlF/dt = 100A / mS
50
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
2.5
26
17
2.5
5
1.1
80
UNIT
V
nA
mA
mΩ
S
pF
Ω
nC
nS
A
V
nS
Ver 1.0
2 2012/4/13

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