Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
Rth(j-c)
Rth(j-a)
SUN04A65IS
Rating
Max. 2.4
Max. 83
Unit
C/W
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance (Note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time (Note 3,4)
Rise time (Note 3,4)
Turn-off delay time (Note 3,4)
Fall time (Note 3,4)
Total gate charge (Note 3,4)
Gate-source charge (Note 3,4)
Gate-drain charge (Note 3,4)
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
ID=250uA, VGS=0
ID=250uA, VDS=VGS
VDS=650V, VGS=0V
VDS=650V, Tc=150C
VDS=0V, VGS=30V
VGS=10V, ID=2A
VDS=10V, ID=2A
VDS=25V, VGS=0V,
f=1.0MHz
VDS=325V, ID=4A,
RG=25Ω
VDS=520V, VGS=10V,
ID=4A
Min.
650
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
--
-5
-1
- 100
- 100
2.4 3
4.4 -
725 -
52 -
6-
48 -
32 -
79 -
25 -
12 16
5-
2.5 -
Unit
V
V
uA
uA
nA
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time (Note 3,4)
Reverse recovery charge (Note 3,4)
IS Integral reverse diode
ISM in the MOSFET
VSD VGS=0V, ISD=4A
trr ISD=4A, VGS=0V
Qrr dIF/dt=100A/us
--4
- - 16
- - 1.4
- 498 -
- 0.98 -
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=10mH, IAS=4A, VDD=50V, RG=25, Starting TJ=25C
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
Unit
A
A
V
ns
uC
Rev. date: 11-SEP-14
KSD-T6Q025-000
www.auk.co.kr
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