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IPD053N06N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power-Transistor - Infineon

भाग संख्या IPD053N06N
समारोह Power-Transistor
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
1 Page
		
<?=IPD053N06N?> डेटा पत्रक पीडीएफ

IPD053N06N pdf
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
IPD053N06N
Value
83
3.0
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
bottom
minimal footprint
6 cm² cooling area4)
-
-
-
- 1.8 K/W
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=36 µA 2.1 2.8 3.3
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.5
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V DS=60 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=45 A
V GS=6 V, I D=12 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=45 A
-
-
-
-
-
38
10 100
10 100 nA
4.5 5.3 mW
6.0 8.0
1.5 2.3 W
75 - S
Rev.2.2
page 2
2012-12-20

विन्यास 9 पेज
डाउनलोड[ IPD053N06N Datasheet.PDF ]


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