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AP13N50I डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

भाग संख्या AP13N50I
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
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<?=AP13N50I?> डेटा पत्रक पीडीएफ

AP13N50I pdf
AP13N50I
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=1mA
VGS=10V, ID=7A
VDS=VGS, ID=250uA
VDS=10V, ID=7A
VDS=400V, VGS=0V
VGS=±30V
ID=14A
VDS=200V
VGS=10V
VDD=200V
ID=7A
RG=50Ω,VGS=10V
RD=25Ω
VGS=0V
VDS=30V
f=1.0MHz
500 -
-
- - 0.52
2-4
- 6.3 -
- - 100
- - ±100
- 48 77
-9-
- 18 -
- 22
-
- 49
-
- 327 -
- 115 -
- 1980 3170
- 210 -
-6-
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage3
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=14A, VGS=0V
IS=14A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 440 - ns
- 6.9 - uC
Notes:
1.Pulse width limited by Max junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4

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