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8N60A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFET - nELL

भाग संख्या 8N60A
समारोह N-Channel Power MOSFET
मैन्युफैक्चरर्स nELL 
लोगो nELL लोगो 
पूर्व दर्शन
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<?=8N60A?> डेटा पत्रक पीडीएफ

8N60A pdf
SEMICONDUCTOR
8N60 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
TO-220AB/TO-263
TO-220F
TO-220AB/TO-263
TO-220F
Min.
Typ.
Max.
0.85
2.6
62.5
62.5
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
V(BR)DSS
Drain to source breakdown voltage
ID = 250µA ,VGS = 0V
600
▲ ▲V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 250µA, VDS=VGS
IDSS
Drain to source leakage current
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TC = 25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
RDS(ON)
Static drain to source on-state resistance ID =4A, VGS = 10V
VGS(TH)
CISS
Gate threshold voltage
Input capacitance
VGS=VDS, ID=250μA
2
COSS
Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
CRSS
Reverse transfer capacitance
td(ON)
Turn-on delay time
tr
td(OFF)
Rise time
Turn-off delay time
VDD = 300V, VGS = 10V, lD = 8A,
RGS = 25Ω (Note 1, 2)
tf Fall time
QG
QGS
QGD
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
VDD = 480V, VGS = 10V, ID = 8A
(Note 1, 2)
Typ.
0.7
1
965
105
12
16.5
60.5
81
64.5
28
4.5
12
Max. UNIT
V
10
100
100
-100
V/ºC
μA
nA
1.2
4
1255
135
Ω
V
pF
16
45
130
ns
170
140
36
nC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 8A, VGS = 0V
1.4 V
Is (IsD)
Continuous source to drain current
ISM Pulsed source current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
G
(Gate)
8
A
32
trr Reverse recovery time
Qrr Reverse recovery charge
ISD = 8A, VGS = 0V,
dIF/dt = 100A/µs
S (Source)
320 ns
2.4 µC
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
www.nellsemi.com
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