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8N60F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL MOSFET - CHONGQING PINGYANG

भाग संख्या 8N60F
समारोह N-CHANNEL MOSFET
मैन्युफैक्चरर्स CHONGQING PINGYANG 
लोगो CHONGQING PINGYANG लोगो 
पूर्व दर्शन
1 Page
		
<?=8N60F?> डेटा पत्रक पीडीएफ

8N60F pdf
Electrical Characteristics (Tc=25,unless otherwise noted)
Parameter
Symbol
Test Conditions
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
BVDSS
ΔBVDSS
VGS=0V,ID=250uA
Reference to 25℃,
/ΔTJ ID=250uA
Zero Gate Voltage Drain Current
IDSS VDS=600V,VGS=0V
Gate-Body Leakage Current,Forward
IGSSF
VGS=30V,VDS=0V
Gate-Body Leakage Current,Reverse
IGSSR
VGS=-30V,VDS=0V
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
VDS=10V,ID=250uA
Drain-Source On-State Resistance
RDS(on)
VGS=10V,ID=4A
Dynamic Characteristics
Input Capacitance
Ciss VDS=25V,VGS=0V,
Output Capacitance
Coss f=1.0MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on) VDD=300V,ID=8A,
Turn-On Rise Time
tr RG=25Ω
(Note4,5)
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg VDS=480V,ID=8A,
Gate-Source Charge
Qgs VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD IS=8A,VGS=0V
Reverse Recovery Time
trr VGS=0V,IS=8A,
Reverse Recovery Charge
Qrr dIF/dt=100A/us, (Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=50V,starling,L=16mH,Rg=25Ω,IAS=8A , TJ=25.
3. ISDID,dI/dt=_A/us,VDDBVDSS,starting TJ=25.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Mix Typ Max Units
600
0.6
--
--
--
V
V/
1 uA
10 uA
-10 uA
2
--
4
1
V
Ω
- - 1500 pF
- - 180 pF
- - 15 pF
13
ns
10
ns
26
ns
8 ns
40 nC
9 nC
20 nC
--
8
- - 32
- - 1.5
570
4.3
A
A
V
ns
uC
- 页码 -
Rev. 14-1
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डाउनलोड[ 8N60F Datasheet.PDF ]


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