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8N10P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL MOSFET - CHONGQING PINGYANG

भाग संख्या 8N10P
समारोह N-CHANNEL MOSFET
मैन्युफैक्चरर्स CHONGQING PINGYANG 
लोगो CHONGQING PINGYANG लोगो 
पूर्व दर्शन
1 Page
		
<?=8N10P?> डेटा पत्रक पीडीएफ

8N10P pdf
Electrical Characteristics (Tc=25,unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
Zero Gate Voltage Drain Current
BVDSS
ΔBVDSS
/ΔTJ
IDSS
IDSS
VGS=0V,ID=250uA
Reference to 25℃,
ID=250uA
VDS=100VGS=0V
VDS=100VGS=0VTJ =55℃)
100
Gate-Body Leakage Current,Forward
IGSS VGS=±20VDS=0V
On Characteristics
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(on)
VDS=10V,ID=250uA
VGS=10V,ID=8A
1.0
Dynamic Characteristics
Input Capacitance
Ciss VDS=50V,VGS=0V,
Output Capacitance
Coss f=1.0MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=50V,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
R L =6.25Ω,
R GEN =3Ω
VGS=10V (Note4,5)
Total Gate Charge
Qg VDS=50V,ID=8A,
Gate-Source Charge
Qgs VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS VG = VD= 0V, Force Current
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD IS=10A,VGS=0V
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=25V,L=0.1mH,Rg=25Ω,IAS=13A , starling TJ=25.
3. ISDID,dI/dt=200A/us,VDDBVDSS,starting TJ=25℃,Pulse width≤300us;duty cycle≤2%.
4. Repetitive rating; pulse width limited by maximum junction temperature.
Typ
0.06
18.5
1190
95
7
7
3
20
3
16
4.5
2.5
Max Units
V
V/
1
5
±100
μA
μA
nA
3.0 V
23 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
8A
32 A
1.0 V

विन्यास 7 पेज
डाउनलोड[ 8N10P Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
8N10PN-CHANNEL MOSFETCHONGQING PINGYANG
CHONGQING PINGYANG


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