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D6V3H1U2LP16 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1 CHANNEL HIGH SURGE TVS DIODE - Diodes

भाग संख्या D6V3H1U2LP16
समारोह 1 CHANNEL HIGH SURGE TVS DIODE
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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D6V3H1U2LP16 pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Pulse Current
ESD Protection Contact Discharge
ESD Protection Air Discharge
Symbol
IPP
VESD_CONTACT
VESD_AIR
Value
90
±30
±30
D6V3H1U2LP16
Unit
Conditions
A 8/20µs (Note 7)
kV Standard IEC 61000-4-2
kV Standard IEC 61000-4-2
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient, TA = +25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
500
250
-55 to +150
Unit
mW
C/W
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Standoff Voltage
Channel Leakage Current (Note 6)
Reverse Breakdown Voltage
Symbol
VRWM
IR
VBR
Clamping Voltage, Positive Transients (Note 7)
VC
Channel Input Capacitance (Note 8)
Dynamic Resistance
CT
RDYN
Min
6.5
Typ
800
0.05
Max
6.3
500
9
8.7
9.5
11.5
Unit
V
nA
V
V
V
V
pF
Test Conditions
VR = 6.3V
IR = 1mA
IPP = 10A, tp = 8/20μs
IPP = 50A, tp = 8/20μs
IPP = 90A, tp = 8/20μs
VR = 0V, f = 1MHz, Any I/O to
GND
TLP, 10A, tp = 100ns
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout, which can be found on our website at
http://www.diodes.com/package-outlines.html.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20µs peak pulse current (Ipp) waveform.
8. Measured from any I/O to GND.
Peak Value Ipp
Half Value Ipp/2
tp 10 X 1000 Waveform
as defined by R.E.A.
01 2
t, TIME (ms)
Figure 1 Pulse Waveform
3
700
600
500
400
300
200
100
0
0
Note 5
40 80 120 160
TA, AMBIENT TEMPERATURE (°C)
Figure 2 Power Derating Curve
200
D6V3H1U2LP16
Document number: DS38004 Rev. 1 - 2
2 of 4
www.diodes.com
July 2016
© Diodes Incorporated

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