DataSheet.in

D5N50F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या D5N50F
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=D5N50F?> डेटा पत्रक पीडीएफ

D5N50F pdf
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDD5N50F
Device
FDD5N50FTM
Package
D-PAK
Reel Size
380mm
Tape Width
16mm
FDD5N50F
FDD5N50FTF
D-PAK
380mm
16mm
Quantity
2500
2000
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TJ = 25oC
ID = 250µA, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±30V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 1.75A
VDS = 20V, ID = 1.75A
(Note 4)
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 5A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 5A
RG = 25
(Note 4, 5)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 3.5A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 5A
dIF/dt = 100A/µs
(Note 4)
-
-
-
-
-
Typ.
-
0.6
-
-
-
-
1.25
4.3
490
66
5
11
3
5
13
22
28
20
-
-
-
65
0.120
Max. Units
-
-
10
100
±100
V
V/oC
µA
nA
5.0 V
1.55
-S
650 pF
88 pF
7.5 pF
15 nC
- nC
- nC
36 ns
54 ns
66 ns
50 ns
3.5 A
14 A
1.5 V
- ns
- µC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 42mH, IAS = 3.5A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 3.5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width 300µs, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDD5N50F Rev. A1
2 www.fairchildsemi.com

विन्यास 8 पेज
डाउनलोड[ D5N50F Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
D5N505A N-Channel MOSFETAlpha & Omega Semiconductors
Alpha & Omega Semiconductors
D5N50FN-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English