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4501 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Tuofeng Semiconductor

भाग संख्या 4501
समारोह N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Tuofeng Semiconductor 
लोगो Tuofeng Semiconductor लोगो 
पूर्व दर्शन
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<?=4501?> डेटा पत्रक पीडीएफ

4501 pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4501
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=7A
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS=±20V
ID=6A
VDS=24V
VGS=4.5V
VDS=20V
ID=1A
RG=3.3Ω,VGS=10V
RD=20Ω
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- - 28 mΩ
- - 42 mΩ
1 - 3V
-6-S
- - 1 uA
- - 25 uA
- - ±100 nA
- 8.4 13.5 nC
- 1.4 - nC
- 4.7 - nC
- 5 - ns
- 8 - ns
- 18.5 - ns
- 9 - ns
- 485 770 pF
- 80 - pF
- 75 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=7A, VGS=0V
IS=6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 19 - ns
- 11 - nC
2

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