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4410 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - Tuofeng Semiconductor

भाग संख्या 4410
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Tuofeng Semiconductor 
लोगो Tuofeng Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=4410?> डेटा पत्रक पीडीएफ

4410 pdf
Shenzhen Tuofeng Semiconductor Technology co., LTD
4410
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
· Off Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS=0V, ID=250uA
VDS=24V, VGS=0V
IGSS Gate-Body Leakage Current
· On Characteristicsc
VGS=±20V, VDS=0V
VGS(th)
Gate Threshold Voltage
RDS(on) Drain-Source On-State Resistance
gFS Forward Transconductance
· Dynamic Characteristics d
VDS=VGS, ID=250uA
VGS=10V, ID=10A
VGS=4.5V, ID=5A
VDS=10V, ID=9A
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
· Switching Characteristicsd
VDS=25V, VGS=0V, f=1MHz
VDS=0V, VGS=0V, f=1MHz
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS=20V, ID=9A, VGS=4.5V
Qgd Gate-Drain Charge
td(on)
Turn-on Delay Time
tr Turn-on Rise Time
td(off)
Turn-off Delay Time
VGS= 10V, VDS= 15V,
ID=9A,RL=15W, RGEN=3.3W
tf Turn-off Fall Time
trr
Body Diode Reverse Recovery Time
IF=9A, dI/dt=100A/uS
Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=100A/uS
· Drain-Source Diode Characteristics
VSD Drain-Source Diode Forward Voltage VGS=0V, IS=2.1A
Note: Pulse Test: Pulse Width £300us, Duty Cycle£2%
Min. Typ. Max. Unit
30 -
--
-V
50 nA
- - ±100 nA
1 - 2.5 V
- - 13.5
mW
- - 20
- 9 -S
- 710 1350
- 155 -
pF
- 145 -
- 2 3W
-8
- 3.3 - nC
- 2.7 -
-7-
-7-
nS
- 22 -
-7-
- 24 - nS
- 14 - nC
- - 1.2 V
2

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डाउनलोड[ 4410 Datasheet.PDF ]


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