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4407 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode Field Effect Transistor - Tuofeng Semiconductor

भाग संख्या 4407
समारोह P-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Tuofeng Semiconductor 
लोगो Tuofeng Semiconductor लोगो 
पूर्व दर्शन
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<?=4407?> डेटा पत्रक पीडीएफ

4407 pdf
Shenzhen Tuofeng Semiconductor Technology co., LTD
4407
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
· Off Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS=0V, ID=-250uA
VDS=-24V, VGS=0V
IGSS Gate-Body Leakage Current
· On Characteristicsc
VGS(th)
Gate Threshold Voltage
IDS(on)
On State Drain Current
VGS=±25V, VDS=0V
VDS=VGS, ID=-250uA
VDS=-5V, VGS=-10V
RDS(on) Drain-Source On-State Resistance
gFS Forward Transconductance
· Dynamic Characteristics d
VGS=-10V, ID=-10A
VGS=-4.5V, ID=-6A
VDS=-10V, ID=-5A
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
· Switching Characteristicsd
VDS=-15V, VGS=0V, f=1MHz
VDS=0V, VGS=0V, f=1MHz
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
td(on)
Turn-on Delay Time
tr Turn-on Rise Time
td(off)
Turn-off Delay Time
tf Turn-off Fall Time
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VDS=-15V, ID=-12A, VGS=-10V
VDD=-15V, RL=1.25W,
VGS=-10V, RG=3W
IDS=-12A, dI/ dt=100A/ uS
· Drain-Source Diode Characteristics
VSD Drain-Source Diode Forward Voltage VGS=0V, IS=-1A
IS Drain-Source Diode Forward Current
Note: Pulse Test: Pulse Width £300us, Duty Cycle£2%
Min. Typ. Max. Unit
-30 -
--
-V
-1
uA
- - ±100 nA
-1.0 -
60 -
-3.0 V
-A
- - 14 mW
- - 20
- 26 -
S
- 2076 2500
- 503 -
pF
- 302 423
1 2 3W
- 37.2 -
- 7 - nC
- 10.4 -
- 12.4 -
- 8.2 -
- 25.6 -
nS
- 12 -
- 33 40 nS
- 23 - nC
- - -1 V
- - -4.2 A
2

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डाउनलोड[ 4407 Datasheet.PDF ]


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