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4402 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - Tuofeng Semiconductor

भाग संख्या 4402
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Tuofeng Semiconductor 
लोगो Tuofeng Semiconductor लोगो 
पूर्व दर्शन
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<?=4402?> डेटा पत्रक पीडीएफ

4402 pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4402
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=12A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=10A
VGS=2.5V, ID=8A
Forward Transconductance
VDS=5V, ID=5A
Diode Forward Voltage
IS=10A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=12A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.2,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
Min
30
0.6
60
25
Typ
0.8
11.1
16
13.1
21
50
0.8
1630
201
142
0.8
19
3.3
5.2
3
4.7
33.5
6
21
11
Max
1
5
100
1.2
14
19.2
16
26
1
4.5
Units
V
µA
nA
V
A
m
m
m
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.

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डाउनलोड[ 4402 Datasheet.PDF ]


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