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IGP10N60T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Low Loss IGBT - Infineon

भाग संख्या IGP10N60T
समारोह Low Loss IGBT
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
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<?=IGP10N60T?> डेटा पत्रक पीडीएफ

IGP10N60T pdf
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction case
Thermal resistance,
junction ambient
IGP10N60T
TRENCHSTOPSeries
q
Symbol
RthJC
RthJA
Conditions
Max. Value
1.35
62
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=0.2mA
VGE = 15V, IC=10A
Tj=25C
Tj=175C
IC=0.3mA,VCE=VGE
VCE=600V,
VGE=0V
Tj=25C
Tj=175C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=10A
min.
600
-
-
4.1
-
-
-
-
Value
typ.
-
1.5
1.8
4.6
-
-
-
6
none
Unit
max.
-V
2.05
-
5.7
µA
40
1000
100
-
nA
S
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VCE=25V,
VGE=0V,
f=1MHz
- 551 - pF
- 40 -
- 17 -
Gate charge
QGate
VCC=480V, IC=10A
-
62
- nC
VGE=15V
Internal emitter inductance
LE TO-220-3-1
- 7 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC5s
-
100
-A
VCC = 400V,
Tj = 25C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.5 30.04.2015

विन्यास 12 पेज
डाउनलोड[ IGP10N60T Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IGP10N60TLow Loss IGBTInfineon
Infineon


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