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AON7826 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 20V Dual N-Channel MOSFET - Alpha & Omega Semiconductors

भाग संख्या AON7826
समारोह 20V Dual N-Channel MOSFET
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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AON7826 pdf
AON7826
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
IDSS Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±12V
100 ±nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
0.4 0.75 1.1
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
50
A
VGS=10V, ID=9A
TJ=125°C
19 23
m
25.5 32
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=7A
21 26 m
VGS=2.5V, ID=6A
26 34 m
VGS=1.8V, ID=2A
34 52 m
gFS Forward Transconductance
VDS=5V, ID=9A
20 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.7 1
V
IS Maximum Body-Diode Continuous Current
15 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
420 525 630
65 95 125
45 75 105
0.8 1.7 2.6
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
10 12.5 15 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=10V, ID=9A
4.5 6 7.5 nC
1 nC
Qgd Gate Drain Charge
2 nC
tD(on)
Turn-On DelayTime
3 ns
tr Turn-On Rise Time
VGS=10V, VDS=10V, RL=1.1, 7.5 ns
tD(off)
Turn-Off DelayTime
RGEN=3
20 ns
tf Turn-Off Fall Time
6 ns
trr Body Diode Reverse Recovery Time IF=9A, dI/dt=500A/µs
14 ns
Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/µs
6 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Dec. 2010
www.aosmd.com
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