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IXFX100N65X2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - IXYS

भाग संख्या IXFX100N65X2
समारोह Power MOSFET
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFX100N65X2?> डेटा पत्रक पीडीएफ

IXFX100N65X2 pdf
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs VDS = 10V, ID = 0.5 • ID25, Note 1
RGi Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
RthJC
RthCS
Characteristic Values
Min. Typ. Max
40 68
S
0.7
10.8
6000
2.6
nF
pF
pF
365
1500
pF
pF
37 ns
26 ns
90 ns
13 ns
183 nC
60 nC
62 nC
0.12C/W
0.15C/W
IXFK100N65X2
IXFX100N65X2
TO-264P Outline
E
Q
R Q1
D
R1
1 23
L1
A
E1
D1
4
D2
b1
x2 e
b2
c
b
A
Terminals: 1 = Gate
2,4 = Drain
3 = Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = IS , VGS = 0V, Note 1
trr
QRM
IRM
IF = 50A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
100 A
400 A
1.4 V
200
1.7
17.2
ns
μC
A
PLUS247TM Outline
Terminals: 1 - Gate
2,4 - Drain
3 - Source
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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डाउनलोड[ IXFX100N65X2 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXFX100N65X2Power MOSFETIXYS
IXYS


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