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DMP3036SSD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP3036SSD
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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DMP3036SSD pdf
DMP3036SSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.3mH
Avalanche Energy (Note 7) L = 0.3mH
TC = +25°C
TC = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
Value
-30
±25
-18.0
-14.3
-10.6
-8.5
-80
-3.6
-17.5
64
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady State
t<10s
TA = +25°C
TA = +70°C
Steady State
t<10s
Symbol
PD
RJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.2
0.9
104
45
1.7
1.1
72
37
13
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at VGS = -5V
Total Gate Charge at VGS = -10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min Typ Max
BVDSS
IDSS
IGSS
-30
-
-
--
- -1.0
- ±100
VGS(th)
-1.0 -1.7 -3.0
RDS (ON)
-
-
16 20
22 29
VSD - -0.7 -1.0
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
1931
-
- 226 -
- 168 -
- 10.9 -
- 8.8 -
- 16.5 -
- 2.6 -
- 3.6 -
- 8.2 -
- 14 -
- 65 -
- 31.6 -
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
V
μA
nA
V
m
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VGS = 0V, ID = -1mA
VDS = -30V, VGS = 0V
VGS = ±25V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -10V, ID = -9A
VGS = -5V, ID = -7A
VGS = 0V, IS = -1A
VDS = -15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -15V, ID = -10A
VDS = -15V, ID = -10A
VGEN = -10V, VDD = -15V,
RGEN = 3Ω, ID = -10A
DMP3036SSD
Document number: DS37349 Rev.1 - 2
2 of 6
www.diodes.com
November 2014
© Diodes Incorporated

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