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DMP3036SFG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP3036SFG
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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DMP3036SFG pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
t<10s
Continuous Drain Current (Note 6) VGS = -5V
Steady
State
t<10s
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L=0.3 mH
Avalanche Energy (Note 7) L=0.3 mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
IS
IAS
EAS
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
DMP3036SFG
Value
-30
±25
-8.7
-7.0
-12.7
-10.1
-7.2
-5.8
-10.5
-8.4
-80
-3.6
-17.5
64
Units
V
V
A
A
A
A
A
A
A
mJ
Value
0.95
137
65
2.3
55
26
6.14
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = -5V
Total Gate Charge VGS = -10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min Typ Max
BVDSS
IDSS
IGSS
-30
-
-
--
- -1.0
- ±100
VGS(th)
RDS (ON)
-1.0
-
-
-2.0
13
18.4
-2.5
20
29
VSD - -0.74 -1.0
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
- 1931 -
- 226 -
- 168 -
- 10.9 -
- 8.8 -
- 16.5 -
- 2.6 -
- 3.6 -
- 8.2 -
- 14 -
- 65 -
- 31.6 -
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting TA = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -30V, VGS = 0V
nA VGS = ±25V, VDS = 0V
V VDS = VGS, ID = -250μA
mVGS = -10V, ID = -8A
VGS = -5V, ID = -5A
V VGS = 0V, IS = -1A
pF
pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = -15V, VGS = -10V, ID = -10A
nC
ns
ns VGEN = -10V, VDD = -15V,
ns RGEN = 3Ω, ID = -10A
ns
POWERDI is a registered trademark of Diodes Incorporated
DMP3036SFG
Document number: DS37038 Rev. 4 - 2
2 of 6
www.diodes.com
January 2015
© Diodes Incorporated

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