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DMP3028LSD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP3028LSD
समारोह DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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<?=DMP3028LSD?> डेटा पत्रक पीडीएफ

DMP3028LSD pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
DMP3028LSD
Value
-30
±20
-6
-4.7
-7.4
-5.8
-2.5
-30
Units
V
V
A
A
A
A
Thermal Characteristics
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Symbol
PD
RΘJA
PD
RΘJA
RΘJC
TJ, TSTG
Value
1.3
0.8
102
61
1.7
1.1
75
50
14.5
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
|Yfs|
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-30
-1
Typ
20
29
11
0.7
1241
147
110
15
22
10.9
3.5
4.7
9.7
17.1
60.5
40.4
Max
-1
±100
-3
25
38
1.2
Unit
V
µA
nA
V
m
S
V
pF
nC
nS
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Test Condition
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS =±20V, VDS = 0V
VDS = VGS, ID = -250µA
VGS = -10V, ID = -7A
VGS = -4.5V, ID = -5.5A
VDS = -5V, ID = -7A
VGS = 0V, IS = -2.1A
VDS = -15V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = -15V, ID = -7A
VGS = -10V, VDD = -15V, RGEN = 6,
ID = -7A
DMP3028LSD
Document number: DS35966 Rev. 3 - 2
2 of 6
www.diodes.com
June 2013
© Diodes Incorporated

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