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DMP3017SFK डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP3017SFK
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMP3017SFK pdf
DMP3017SFK
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7)
Avalanche Energy (Note 7)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Value
-30
±25
-10.4
-8.3
-7.8
-6.2
-3
-80
-14
104
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TC = +25°C
Symbol
PD
RJA
PD
RJA
PD
RJC
TJ, TSTG
Value
1
123
2.2
55
17
7.2
-55 to +150
Units
W
°C/W
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Zero Gate Voltage Drain Current TJ = +150°C (Note 9)
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
On State Drain Current (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
-30
VGS(th)
RDS(ON)
VSD
ID(ON)
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
-1
-20
Typ
-1.6
9.5
15
-0.7
2207
390
343
8.4
42.7
21.6
7.9
10
7.35
16.4
67.2
37.5
18.6
8.6
Max
-1
-100
±10
-2.5
14
25
-1.2
4414
780
686
20
90
45
16
20
15
30
110
60
35
17.5
Unit
Test Condition
V VGS = 0V, ID = -10mA
µA VDS = -24V, VGS = 0V
µA VGS = ±25V, VDS = 0V
V VDS = VGS, ID = -250μA
mVGS = -10V, ID = -9.5A
VGS = -4.5V, ID = -6.9A
V VGS = 0V, IS = -1A
A VDS -5V, VGS = -10V
pF VDS = -15V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = -15V, ID = -9.5A
ns
VDD = -15V, VGS = -10V,
RGEN = 6Ω, ID = -9.5A
ns
nC
IS = -9.5A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.
7. UIS in production with L = 1mH, TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMP3017SFK
Document number: DS37310 Rev. 4 - 2
2 of 7
www.diodes.com
May 2015
© Diodes Incorporated

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