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DMP3012LPS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP3012LPS
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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<?=DMP3012LPS?> डेटा पत्रक पीडीएफ

DMP3012LPS pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Continuous Drain Current (Note 6) VGS = -4.5V
Pulsed Drain Current (Notes 6)
Avalanche Current (Notes 7) L = 1mH
Avalanche Energy (Notes 7) L = 1mH
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IAR
EAR
DMP3012LPS
Value
-30
±20
13.2
10.5
11.4
9.1
-100
-24
292
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 6)
Thermal Resistance, Junction to Case @ TC = +25°C (Notes 6 )
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.29
97
2.36
53
4.0
-55 to +150
Unit
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
-30
-1.1
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Typ
-1.6
7.5
8.5
30
-0.65
6807
988
647
6.2
139
66
19
21
8.9
10.5
254
95
Max
-1.0
±100
-2.1
9.0
12.0
-1.0
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit Test Condition
V VGS = 0V, ID = -250µA
μA VDS = -30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250µA
mVGS = -10V, ID = -10A
VGS = -4.5V, ID = -10A
S VDS = -15V, ID = -10A
V VGS = 0V, IS = -1A
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = -15V, ID = -10A
nC
ns
ns VDS = -15V, VGEN = -10V,
ns RG = 6, ID = -1A
ns
POWERDI is a registered trademark of Diodes Incorporated.
DMP3012LPS
Document number: DS35247 Rev. 2 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated

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