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DMP3010LK3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP3010LK3
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMP3010LK3 pdf
DMP3010LK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7) VGS = -10V
Continuous Drain Current (Note 7) VGS = -4.5V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 7)
Avalanche Current (Note 8)
Avalanche Energy (Note 8)
Steady
State
t<10s
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
IS
IAS
EAS
Value
-30
±20
-17.0
-13.0
-27.0
-21.0
-14.5
-11.5
-23.0
-18.0
-100
5.5
47
113
Units
V
V
A
A
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
PD
RJA
PD
RJA
TJ, TSTG
Value
1.7
72
29
3.4
37
15
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-30

-1.1


Typ

-1.6
6.5
7.2
30
-0.65
6234
1500
774
1.28
59.2
16.1
15.7
11.4
9.4
260.7
99.3
Max
-1
100
-2.1
8
10.2
-1.0


Unit Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -30V, VGS = 0V
nA VGS = 20V, VDS = 0V
V VDS = VGS, ID = -250µA
m
VGS = -10V, ID = -10A
VGS = -4.5V, ID = -10A
S VDS = -15V, ID = -10A
V VGS = 0V, IS = -1A
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
µ VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = -15V, VGS = -4.5V,
ID = -10A
ns
VDS = -15V, VGEN = -10V,
RG = 6, ID = -1A
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8 .UIS in production with L = 0.1mH, TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
DMP3010LK3
Document number: DS35716 Rev. 5 - 2
2 of 7
www.diodes.com
July 2013
© Diodes Incorporated

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