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DMP2160UFDBQ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2160UFDBQ
समारोह DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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<?=DMP2160UFDBQ?> डेटा पत्रक पीडीएफ

DMP2160UFDBQ pdf
DMP2160UFDBQ
Marking Information
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
P2 = Marking Code
YM = Date Marking
P2 Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Dot denotes Pin 1
2009
W
Feb
2
2010
X
Mar
3
2011
Y
Apr
4
2012
Z
2013
A
2014
B
May
5
Jun
6
Jul Aug
78
2015
C
Sep
9
2016
D
Oct
O
2017
E
Nov
N
2018
F
Dec
D
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 6)
Pulsed Drain Current (Note 7)
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±12
-3.8
-13
Units
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
Value
1.4
89
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min Typ Max
BVDSS -20  
IDSS
  -1
IGSS
  100
  800
VGS(th)
RDS (ON)
-0.45


54
68
86
-0.9
70
85
Forward Transfer Admittance
Diode Forward Voltage (Note 8)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
8
0.7 -1.2
536
68
59
8.72
6.5
0.8
1.4
11.51
12.09
55.34
27.54
Notes:
6. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
Unit
Test Condition
V VGS = 0V, ID = -250µA
A VDS = -20V, VGS = 0V
nA VGS = 8V, VDS = 0V
VGS = 12V, VDS = 0V
V VDS = VGS, ID = -250A
VGS = -4.5V, ID = -2.8A
mVGS = -2.5V, ID = -2.0A
VGS = -1.8V, ID = -1.0A
S VDS = -5V, ID = -2.8A
V VGS = 0V, IS = -1.6A
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
VGS = -4.5V, VDD = -10V,
nC ID = -1.5A
nC
ns
ns VGEN = -4.5V, VDD = -10V,
ns RL = 10Ω, RG = 6Ω
ns
DMP2160UFDBQ
Document Number: DS37546 Rev. 1 - 2
2 of 6
www.diodes.com
January 2015
© Diodes Incorporated

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