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DMP2100UFU डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2100UFU
समारोह DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMP2100UFU pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -10V
Steady TA = +25°C
State TA = +70°C
Maximum Continuous Body Diodes Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMP2100UFU
Value
-20
±10
-5.7
-4.4
-2
-30
-15
12
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TA = +25°C
Steady State
TA = +25°C
Steady State
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.9
138
1.9
66
9.6
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
Qrr
Min
-20
-0.3
Typ
25
29
37
47
-0.7
906
103
29
259
10.3
21.4
1.6
2.3
70
144
626
396
279
466
Max
-1
±10
-1.4
38
43
75
-1.2
Unit
V
µA
µA
V
mΩ
V
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Test Condition
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = -250µA
VGS = -10V, ID = -3.5A
VGS = -4.5V, ID = -3A
VGS = -2.5V, ID = -1A
VGS = -1.8V, ID = -0.5A
VGS = 0V, IS = -2.9A
VDS = -10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = -10V, ID = -4A
VDS = -10V, VGS = -4.5V,
RL = 2.5Ω, RG = 3.0Ω
IF = -3.5A, di/dt = -100A/μs
IF = -3.5A, di/dt = -100A/μs
DMP2100UFU
Document number: DS37946 Rev. 1 - 2
2 of 7
www.diodes.com
May 2015
© Diodes Incorporated

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