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DMP2100U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2100U
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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<?=DMP2100U?> डेटा पत्रक पीडीएफ

DMP2100U pdf
NOT RECOMMENDED FOR NEW DESIGN
USE DMP2045U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage (Note 7)
Steady TA = +25°C
Continuous Drain Current (Note 9) VGS = -10V
State
t<5s
TA = +70°C
TA = +25°C
TA = +70°C
Maximum Continuous Body Diodes Forward Current (Note 9)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Pulsed Body Diodes Forward Current (10µs Pulse, Duty Cycle = 1%)
Symbol
VDSS
VGSS
ID
ID
IS
IDM
ISM
DMP2100U
Value
-20
±10
-4.3
-3.4
-5.5
-4.3
-2
-30
-30
Unit
V
V
A
A
A
A
A
Thermal Characteristics
Total Power Dissipation (Note 8)
Characteristic
Thermal Resistance, Junction to Ambient (Note 8)
Total Power Dissipation (Note 9)
Thermal Resistance, Junction to Ambient (Note 9)
Thermal Resistance, Junction to Case (Note 9)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady State
t<5s
TA = +25°C
TA = +70°C
Steady State
t<5s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.8
0.5
161
96
1.3
0.8
99
60
15
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
SWITCHING CHARACTERISTICS (Note 11)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min Typ Max Unit
BVDSS
-20
V
IDSS
-1
µA
IGSS
±10 µA
VGS(TH)
-0.3
-1.4
V
25 38
RDS(ON)
29
37
43 mΩ
75
47
|Yfs| 3 S
Ciss 216
Coss
90
Crss
24
Rg 250
pF
pF
pF
Qg 9.1 nC
Qgs 1.6 nC
Qgd 2.0 nC
tD(ON)
80
ns
tR 155 ns
tD(OFF)
688
ns
tF 423 ns
Notes:
7. AEC-Q101 VGS maximum is ±9.6V.
8. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
9. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
Test Condition
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = -250µA
VGS = -10V, ID = -3.5A
VGS = -4.5V, ID = -3A
VGS = -2.5V, ID = -1A
VGS = -1.8V, ID = -0.5A
VDS = -5V, ID = -4A
VDS = -15V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = -4.5V, VDS = -10V
ID = -4A
VDS = -10V, VGS = -4.5V,
RD = 2.5Ω, RG = 3.0Ω
DMP2100U
Document number: DS35718 Rev. 8 - 3
2 of 6
www.diodes.com
February 2018
© Diodes Incorporated

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