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DMP2100UCB9 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2100UCB9
समारोह DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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<?=DMP2100UCB9?> डेटा पत्रक पीडीएफ

DMP2100UCB9 pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 6) VGS = -4.5V
Continuous Source Pin Current (Note 6)
Steady
State
Steady
State
TC = +25°C
TC = +70°C
TC = +25°C
TC = +70°C
Continuous Gate Clamp Current (Note 6)
Pulsed Source Pin Current (Pulse duration 10μs, duty cycle ≤ 1%)
Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤ 1%)
Pulsed Gate Clamp Current (Pulse duration 10μs, duty cycle ≤ 1%)
Symbol
VD1D2
VGS
ID1D2
ID1D2
IS
IG
ISM
IDM
IGM
DMP2100UCB9
Value
-20
-6
-3.0
-2.1
-4.0
-3.0
-2.0
-0.4
-15
-28
-6
Units
V
V
A
A
A
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
Value
0.8
1.6
152
65
-55 to +150
Units
W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DIODE CHARACTERISTICS
Diode Forward Voltage (Note 6)
Reverse Recovery Charge
Reverse Recovery Time
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Gate Charge at Vth
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min
BVD1D2
BVGSS
IDDS
IGSS
-20
-6.1
VGS(th)
RD1D2(ON)
|Yfs|
VSD
Qrr
trr
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qg(th)
tD(on)
tr
tD(off)
tf
-0.4
Typ
-0.7
80
105
140
5.3
-0.7
18
34
232
107
43.5
3.3
0.3
0.6
0.2
8.5
7.0
47
28
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP2100UCB9
Document number: DS35725 Rev. 5 - 2
2 of 6
www.diodes.com
Max
-1
-100
-0.9
100
130
175
-1
310
150
55
4.2
Unit
Test Condition
V VGS = 0V, ID1D2 = -250μA
V IGS = -250μA, VD1D2 = 0V
μA VD1D2 = -16V, VGS = 0V
nA VGS = -6V, VDS = 0V
V VD1D2 = VGS, IDS = -250μA
VGS = -4.5V, ID1D2 =- 1A
mΩ VGS = -2.5V, ID1D2 = -1A
VGS = -1.8V, ID1D2 = -1A
S VD1D2 = -10V, ID1D2 = -1A
V VGS = 0V, ID1D2 = -1A
nC Vdd = -9.5V, IF = -1A,
ns di/dt = 200A/μs
pF
pF VD1D2 = -10V, VGS = 0V,
f = 1.0MHz
pF
nC
nC VGS = -4.5V, VD1D2 = -10V,
nC ID1D2 = -1A
nC
ns
ns VD1D2 = -10V, VGS = -4.5V,
ns ID1D2 = -1A, RG = 30Ω,
ns
May 2015
© Diodes Incorporated

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