DataSheet.in

DMP2066LVT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2066LVT
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
1 Page
		
<?=DMP2066LVT?> डेटा पत्रक पीडीएफ

DMP2066LVT pdf
DMP2066LVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Continuous
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Body-Diode Continuous Current (Note 5)
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
IS
Value
-20
8
-4.5
-3.7
-20
-2.0
Unit
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
1.2
100
74
1.8
70
46
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
STATIC PARAMETERS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ TJ = +55°C (Note 8)
Zero Gate Voltage Drain Current @TJ = +150°C (Note 8)
Gate-Body Leakage Current
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
Static Drain-Source On-Resistance @ TJ = +125°C (Note 8)
Diode Forward Voltage
On State Drain Current (Note 8)
DYNAMIC PARAMETERS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
RDS (ON)
VSD
ID(ON)
Ciss
Coss
Crss
QG
QGS
QGD
td(on)
tr
td(off)
tf
Min
-20
-0.4
-0.5
10










Typ
25
33
-0.72
1,496
130
116
14.4
2.6
2.7
8.5
11
61
25
Max
-1
-10
-100
100
-1.5
45
65
72
-1.4
2,990
260
230
25
5
5.5
30
60
130
100
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V ID = -250µA, VGS = 0V
μA VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V
μA VDS = -16V, VGS = 0V
nA VDS = 0V, VGS = 8V
V VDS = VGS, ID = -250µA
mVGS = -4.5V, ID = -4.5A
VGS = -2.5V, ID = -3.8A
mVGS = -4.5V, ID = -4.5A
V IS = -2.1A, VGS = 0V
A VDS 5V, VGS = 4.5V
pF
pF VDS = -15V, VGS = 0V
f = 1.0MHz
pF
nC VDS = -10V, VGS = -4.5V,
ID = -4.5A
ns
VDS = -5V, VGS = -4.5V,
ID = -1A, RG = 6.0
DMP2066LVT
Document number: DS36578 Rev. 4 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated

विन्यास 6 पेज
डाउनलोड[ DMP2066LVT Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
DMP2066LVTP-CHANNEL ENHANCEMENT MODE MOSFETDiodes
Diodes


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English