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DMP2060UFDB डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2060UFDB
समारोह DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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<?=DMP2060UFDB?> डेटा पत्रक पीडीएफ

DMP2060UFDB pdf
DMP2060UFDB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 4.5V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Steady
State
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IS
IDM
Value
-20
±12
-3.2
-2.5
-1.5
-18
Units
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
t < 5s
Steady State
t < 5s
Symbol
PD
RJA
RJC
TJ, TSTG
Value
1.4
2.2
92
55
30
-55 to 150
Units
W
°C/W
°C
Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
-20
VGS(th)
RDS(ON)
VSD
-0.35
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Typ
59
76
-0.65
881
84
67
14.3
11
18
1.5
2.3
5.0
9.5
29.7
20.4
23.6
11.4
Notes:
5. Device mounted on on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to product testing.
Max
-1.0
±10
-1.4
90
137
-1.2
Unit
V
μA
μA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
nS
nC
Test Condition
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2.9A
VGS = -2.5V, ID = -2.3A
VGS = 0V, IS = -3.0A
VDS = -10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -10V, ID = -3.7A
VDD = -10V, VGS = -4.5V,
RL = 3.3Ω, RG = 1Ω
IS = -3.0A, dI/dt = 100A/μs
IS = -3.0A, dI/dt = 100A/μs
DMP2060UFDB
Document number: DS37422 Rev. 2 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated

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