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DMP2047UCB4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2047UCB4
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMP2047UCB4 pdf
DMP2047UCB4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -2.5V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
Value
-20
-6
-4.1
-3.2
-3.6
-2.8
16
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 7)
Thermal Resistance, Junction to Case @ TC = +25°C (Note 7)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
RθJC
PD
RθJA
TJ, TSTG
Value
1.0
127
25.8
1.66
77
-55 to +150
Unit
W
°C/W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Reverse Recovery Charge
Reverse Recovery Time
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Charge at Vth
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min
BVDSS
BVGSS
IDSS
IGSS
-20
-6.0
VGS(th)
RDS(ON)
|Yfs|
VSD
Qrr
trr
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qg(th)
tD(on)
tr
tD(off)
tf
-0.4
Typ
-0.8
40
53
3.7
-0.7
3.07
13.14
218
116
11
2.3
0.2
0.4
0.2
7.9
10.7
48
38
Notes:
5. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
6. Repetitive rating, pulse width limited by junction temperature.
7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
Max
-1
-100
-1.2
47
60
-1.0
Unit Test Condition
V VGS = 0V, ID = -250μA
V VDS = 0V, IG = -250μA
μA VDS = -16V, VGS = 0V
nA VGS = -6V, VDS = 0V
V VDS = VGS, ID = -250μA
mΩ VGS = -4.5V, ID =-1A
VGS = -2.5V, ID = -1A
S VDS = -10V, ID = -1A
V VGS = 0V, IS = -1A
nC VDD= 10V, IF = 1A,
ns di/dt =100A/μs
pF VDS = -10V, VGS = 0V,
f = 1.0MHz
nC VGS = -4.5V, VDS = -10V,
ID = -1A
ns
VDS = -10V, VGS = -2.5V,
RG = 20Ω, ID = -1A
DMP2047UCB4
Document number: DS36154 Rev. 6 - 2
2 of 6
www.diodes.com
May 2015
© Diodes Incorporated

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