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DMP1100UCB4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP1100UCB4
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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<?=DMP1100UCB4?> डेटा पत्रक पीडीएफ

DMP1100UCB4 pdf
DMP1100UCB4
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Source Current @ VGS = -4.5V (Note 5)
Continuous Source Current @ VGS = -4.5V (Note 6)
Pulsed Drain Current (Pulse Duration 10μs, Duty Cycle ≤1%)
Continuous Source-Drain Diode Current
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
Value
-12
8
-2.5
-2.0
-3.2
-2.6
-13
-1.2
Unit
V
V
A
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
.
Symbol
PD
RJA
PD
RJA
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
Min
-12
-
-
-0.35
Typ
-
-
-
-0.55
Max
-
1
10
-0.8
Unit
V
µA
µA
V
Static Drain-Source On-Resistance
RDS(ON)
-
65 83
80 96
90 150
115 170
135 300
150 400
m
Forward Transfer Admittance
Body Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs| - 6.5 -
VSD - -0.7 -
Ciss - 680 820
Coss - 220 290
Crss - 205 280
Rg - 11.2 17
Qg - 9.0 14
Qgs - 1.0 -
Qgd - 2.6 -
tD(ON) - 4.4
9
tR
- 10.1
-
tD(OFF)
-
22
33
tF
- 20
-
S
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Value
0.67
187
1.1
117
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Test Condition
VGS = 0V, ID = -250μA
VDS = -12V, VGS = 0V
VGS = 8V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -3A
VGS = -2.5V, ID = -2A
VGS = -1.8V, ID = -1A
VGS = -1.5V, ID = -1A
VGS = -1.4V, ID = -1A
VGS = -1.3V, ID = -1A
VDS = -4V, IS = -1.5A
VGS = 0V, IS = -1.5A,
VDS = -6V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -4.5V, VDS = -6V,
ID = -2A
VDD = -4V, ID = -2A
VGEN = -4.5V, Rg = 1Ω, RL = 3Ω
DMP1100UCB4
Document number: DS38339 Rev. 2 - 2
2 of 7
www.diodes.com
April 2016
© Diodes Incorporated

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