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UPA895TS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON RF TRANSISTOR - NEC

भाग संख्या UPA895TS
समारोह NPN SILICON RF TRANSISTOR
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
1 Page
		
<?=UPA895TS?> डेटा पत्रक पीडीएफ

UPA895TS pdf
µPA895TS
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
9
5.5
1.5
100
110 in 1 element
130 in 2 elements
150
65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 5 V, IE = 0 mA
IEBO VEB = 1 V, IC = 0 mA
h Note 1
FE
VCE = 1 V, IC = 5 mA
fT VCE = 1 V, IC = 5 mA, f = 2 GHz
fT VCE = 1 V, IC = 15 mA, f = 2 GHz
S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz
S21e2 VCE = 1 V, IC = 15 mA, f = 2 GHz
NF VCE = 1 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
C Note 2
re
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
MIN.
100
3.0
5.0
3.0
4.5
TYP.
120
4.5
6.5
4.0
5.5
1.9
MAX.
600
600
145
2.5
Unit
nA
nA
GHz
GHz
dB
dB
dB
0.6 0.8 pF
Notes 1. Pulse measurement: PW 350 µs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
kP
100 to 145
2 Data Sheet PU10335EJ02V0DS

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डाउनलोड[ UPA895TS Datasheet.PDF ]


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