DataSheet.in

IS66WVD4M16ALL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 64Mb Async and Burst CellularRAM - ISSI

भाग संख्या IS66WVD4M16ALL
समारोह 64Mb Async and Burst CellularRAM
मैन्युफैक्चरर्स ISSI 
लोगो ISSI लोगो 
पूर्व दर्शन
1 Page
		
<?=IS66WVD4M16ALL?> डेटा पत्रक पीडीएफ

IS66WVD4M16ALL pdf
IS66WVD4M16ALL
General Description
CellularRAM™ (Trademark of MicronTechnology) products are high-speed, CMOS pseudo-static
random access memories developed for low-power, portable applications.
The 64Mb DRAM core device is organized as 4 Meg x 16 bits. This device is a variation
of the industry-standard Flash control interface, with a multiplexed address/data bus.
The multiplexed address and data functionality dramatically reduce the required
signal count, and increase READ/WRITE bandwidth.
To operate seamlessly on a burst Flash bus, CellularRAM products have incorporated a
transparent self-refresh mechanism. The hidden refresh requires no additional support
from the system memory controller and has no significant impact on device read/write
performance.
Two user-accessible control registers define device operation. The bus configuration
register (BCR) defines how the CellularRAM device interacts with the system memory
bus and is nearly identical to its counterpart on burst mode Flash devices.
The refresh configuration register (RCR) is used to control how refresh is performed on
the DRAM array. These registers are automatically loaded with default settings during
power-up and can be updated anytime during normal operation.
Special attention has been focused on standby current consumption during self refresh.
CellularRAM products include three mechanisms to minimize standby current. Partial
array refresh (PAR) enables the system to limit refresh to only that part of the DRAM
array that contains essential data. Temperature-compensated refresh (TCR) uses an
on-chip sensor to adjust the refresh rate to match the device temperature — the refresh
rate decreases at lower temperatures to minimize current consumption during standby.
Deep power-down (DPD) enables the system to halt the refresh operation altogether
when no vital information is stored in the device. The system-configurable refresh
mechanisms are adjusted through the RCR.
This CellularRAM device is compliant with the industry-standard CellularRAM 2.0
feature set established by the CellularRAM Workgroup. It includes support for both
variable and fixed latency, with three drive strengths, a variety of wrap options, and a
device ID register (DIDR).
A16~A21
Address
Decode Logic
Refresh
Configuration Register
(RCR)
Device ID Register
(DIDR)
4096K X 16
DRAM
Memory Array
Input
/Output
Mux
And
Buffers
Bus
Configuration Register
(BCR)
CE#
WE#
OE#
CLK
ADV#
CRE
LB#
UB#
WAIT
Control
Logic
Rev.A | June 2011
ADQ0~ADQ15
[ Functional Block Diagram]
www.issi.com - SRAM@issi.com
2

विन्यास 30 पेज
डाउनलोड[ IS66WVD4M16ALL Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IS66WVD4M16ALL64Mb Async and Burst CellularRAMISSI
ISSI


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English