DataSheet.in

IS66WVC4M16ALL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 64Mb Async/Page/Burst CellularRAM - ISSI

भाग संख्या IS66WVC4M16ALL
समारोह 64Mb Async/Page/Burst CellularRAM
मैन्युफैक्चरर्स ISSI 
लोगो ISSI लोगो 
पूर्व दर्शन
1 Page
		
<?=IS66WVC4M16ALL?> डेटा पत्रक पीडीएफ

IS66WVC4M16ALL pdf
IS66WVC4M16ALL
IS67WVC4M16ALL
General Description
CellularRAM™ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS
pseudo-static random access memory developed for low-power, portable applications.
The 64Mb DRAM core device is organized as 4 Meg x 16 bits. This device is a variation of
the industry-standard Flash control interface that dramatically increase READ/WRITE
bandwidth compared with other low-power SRAM or Pseudo SRAM offerings.
To operate seamlessly on a burst Flash bus, CellularRAM products have incorporated a
transparent self-refresh mechanism. The hidden refresh requires no additional support
from the system memory controller and has no significant impact on device read/write
performance.
Two user-accessible control registers define device operation. The bus configuration
register (BCR) defines how the CellularRAM device interacts with the system memory
bus and is nearly identical to its counterpart on burst mode Flash devices.
The refresh configuration register (RCR) is used to control how refresh is performed on
the DRAM array. These registers are automatically loaded with default settings during
power-up and can be updated anytime during normal operation.
Special attention has been focused on standby current consumption during self refresh.
CellularRAM products include three mechanisms to minimize standby current. Partial
array refresh (PAR) enables the system to limit refresh to only that part of the DRAM
array that contains essential data. Temperature-compensated refresh (TCR) uses an
on-chip sensor to adjust the refresh rate to match the device temperature — the refresh
rate decreases at lower temperatures to minimize current consumption during standby.
Deep power-down (DPD) enables the system to halt the refresh operation altogether
when no vital information is stored in the device. The system-configurable refresh
mechanisms are adjusted through the RCR.
This CellularRAM device is compliant with the industry-standard CellularRAM 1.5
feature set established by the CellularRAM Workgroup. It includes support for both
variable and fixed latency, with three drive strengths, a variety of wrap options, and a
device ID register (DIDR).
A0~A21
CE#
WE#
OE#
CLK
ADV#
CRE
LB#
UB#
WAIT
Control
Logic
Rev. B | July 2012
Address
Decode Logic
Refresh
Configuration Register
(RCR)
Device ID Register
(DIDR)
Bus
Configuration Register
(BCR)
4096K X 16
DRAM
Memory Array
[ Functional Block Diagram]
www.issi.com – SRAM@issi.com
Input
/Output
Mux
And
Buffers
DQ0~DQ15
2

विन्यास 30 पेज
डाउनलोड[ IS66WVC4M16ALL Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IS66WVC4M16ALL64Mb Async/Page/Burst CellularRAMISSI
ISSI


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English