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AP561-F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HBT Power Amplifier - TriQuint Semiconductor

भाग संख्या AP561-F
समारोह HBT Power Amplifier
मैन्युफैक्चरर्स TriQuint Semiconductor 
लोगो TriQuint Semiconductor लोगो 
पूर्व दर्शन
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<?=AP561-F?> डेटा पत्रक पीडीएफ

AP561-F pdf
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
55 to 150°C
RF Input Power, CW, 50Ω, T=25°C +33 dBm
Supply Voltage (VCC)
BVcbo
Power Dissipation
+15 V
+35 V
14 W
Operation of this device outside the parameter ranges
given above may cause permanent damage.
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Recommended Operating Conditions
Parameter
Min Typ Max Units
Supply Voltage (VCC)
TCASE
Tj for >106 hours MTTF
12.0
40 +85
158
V
°C
°C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: VCC =+12V, VPD =+5V, Temp= +25°C, using AP561-PCB2600 application circuit
Parameter
Conditions
Min Typ Max Units
Operational Frequency Range
700
2900
MHz
Test Frequency
2600
MHz
Output Channel Power
+30 dBm
Gain
13.0
dB
Input Return Loss
14.5
dB
Output Return Loss
6.5 dB
Error Vector Magnitude
See note 1.
1.7 %
Collector Efficiency
16.2 %
RF Switching Speed
See note 2.
50 ns
Output P1dB
+39 dBm
Operating Current, ICC
510 mA
Quiescent Current, ICQ
300 mA
Reference Current, IREF
10 mA
Thermal Resistance, θjc
Module (junction to case)
6.0 °C/W
Notes:
1. Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels signal, 9.5 dB PAR @ 0.01%.
2. Switching speed: 50% TTL to 100/0% RF. Vpd used for device power down (low=RF off).
Datasheet: Rev B 09-17-13
© 2013 TriQuint
- 2 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com

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